NE3513M04-T2B-A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: RF MOSFET GAAS HJ-FET 2V 4MMOLD
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 125mW
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: 4-Super Mini Mold
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
auf Bestellung 4860000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 1.6 EUR |
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Technische Details NE3513M04-T2B-A Renesas Electronics Corporation
Description: RF MOSFET GAAS HJ-FET 2V 4MMOLD, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 60mA, Frequency: 12GHz, Configuration: N-Channel, Power - Output: 125mW, Gain: 13dB, Technology: GaAs HJ-FET, Noise Figure: 0.65dB, Supplier Device Package: 4-Super Mini Mold, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.