NE3512S02-T1C-A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: RF MOSFET HFET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: HFET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 460+ | 1.06 EUR |
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Technische Details NE3512S02-T1C-A Renesas Electronics Corporation
Description: RF MOSFET GAAS HJ-FET 2V S02, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 70mA, Frequency: 12GHz, Gain: 13.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.35dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Weitere Produktangebote NE3512S02-T1C-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NE3512S02-T1C-A | Hersteller : CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
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NE3512S02-T1C-A | Hersteller : CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |