MT53E512M16D1Z11MWC1 Micron Technology Inc.
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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Technische Details MT53E512M16D1Z11MWC1 Micron Technology Inc.
Description: LPDDR4 8G DIE 512MX16, Packaging: Box, Package / Case: Die, Mounting Type: Surface Mount, Memory Size: 8Gbit, Memory Type: Volatile, Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Memory Format: DRAM, Supplier Device Package: Wafer, Part Status: Active, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 512M x 16.