MSMCJ33Ae3 Microchip Technology
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Lieferzeit 302-306 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 4.38 EUR |
100+ | 4.1 EUR |
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Technische Details MSMCJ33Ae3 Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 28.1A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: DO-214AB (SMCJ), Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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MSMCJ33Ae3 | Hersteller : Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28.1A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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