MSCSM170AM039CD3AG Microchip Technology
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Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2337.91 EUR |
100+ | 1769.22 EUR |
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Technische Details MSCSM170AM039CD3AG Microchip Technology
Description: SIC 2N-CH 1700V 523A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.4kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 523A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V, Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V, Vgs(th) (Max) @ Id: 3.3V @ 22.5mA, Part Status: Active.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM170AM039CD3AG | Hersteller : Microchip Technology | PM-MOSFET-SIC-SBD-D3 |
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MSCSM170AM039CD3AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1700V 523A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.4kW (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Part Status: Active |
Produkt ist nicht verfügbar |