MRFX1K80NR5578 NXP USA Inc.
Hersteller: NXP USA Inc.Description: RF POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: OM-1230-4L2L
Current Rating (Amps): 100mA
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 400MHz
Configuration: Dual
Power - Output: 1800W
Gain: 24.4dB
Technology: LDMOS
Supplier Device Package: OM-1230-4L2L
Part Status: Active
Voltage - Rated: 179 V
Voltage - Test: 65 V
Current - Test: 100 mA
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Technische Details MRFX1K80NR5578 NXP USA Inc.
Description: RF POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: OM-1230-4L2L, Current Rating (Amps): 100mA, Mounting Type: Chassis Mount, Frequency: 1.8MHz ~ 400MHz, Configuration: Dual, Power - Output: 1800W, Gain: 24.4dB, Technology: LDMOS, Supplier Device Package: OM-1230-4L2L, Part Status: Active, Voltage - Rated: 179 V, Voltage - Test: 65 V, Current - Test: 100 mA.