MMFTN3422K Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET, SOT-23, 30V, 4.2A, 0, 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 25 V
Description: MOSFET, SOT-23, 30V, 4.2A, 0, 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTN3422K Diotec Semiconductor
Description: MOSFET, SOT-23, 30V, 4.2A, 0, 1., Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 25 V.
Weitere Produktangebote MMFTN3422K nach Preis ab 0.078 EUR bis 0.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MMFTN3422K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Case: SOT23 Drain-source voltage: 30V Drain current: 4.2A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1303 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
MMFTN3422K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Case: SOT23 Drain-source voltage: 30V Drain current: 4.2A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar |
auf Bestellung 1303 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
MMFTN3422K | Hersteller : Diotec Semiconductor | MOSFET MOSFET, SOT-23, 30V, 4.2A, 150C, N |
auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
MMFTN3422K | Hersteller : Diotec Semiconductor | MOSFETs (Field Effect Transistors) |
Produkt ist nicht verfügbar |