MMBZ9V1CA DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 1.7A; 24W; double,common anode
Type of diode: TVS array
Breakdown voltage: 8.65...9.56V
Max. forward impulse current: 1.7A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 6V
Features of semiconductor devices: ESD protection
Leakage current: 0.3µA
Kind of package: reel; tape
Capacitance: 160pF
Anzahl je Verpackung: 10 Stücke
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Technische Details MMBZ9V1CA DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays, Description: Diode: TVS array; 8.65÷9.56V; 1.7A; 24W; double,common anode, Type of diode: TVS array, Breakdown voltage: 8.65...9.56V, Max. forward impulse current: 1.7A, Peak pulse power dissipation: 24W, Semiconductor structure: common anode; double, Mounting: SMD, Case: SOT23, Max. off-state voltage: 6V, Features of semiconductor devices: ESD protection, Leakage current: 0.3µA, Kind of package: reel; tape, Capacitance: 160pF, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote MMBZ9V1CA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MMBZ9V1CA | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 280pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 40W Power Line Protection: No |
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MMBZ9V1CA | Hersteller : Diotec Semiconductor |
ESD Diode, SOT-23, 150C, 24W, Bidir |
Produkt ist nicht verfügbar |
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MMBZ9V1CA | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 1.7A; 24W; double,common anode Type of diode: TVS array Breakdown voltage: 8.65...9.56V Max. forward impulse current: 1.7A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 6V Features of semiconductor devices: ESD protection Leakage current: 0.3µA Kind of package: reel; tape Capacitance: 160pF |
Produkt ist nicht verfügbar |