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| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 85.11 EUR |
| 10+ | 85.1 EUR |
| 25+ | 85.08 EUR |
| 100+ | 84.16 EUR |
| 250+ | 82.63 EUR |
| 500+ | 81.95 EUR |
| 1000+ | 81.49 EUR |
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Technische Details JANS1N5420 Microchip / Microsemi
Description: DIODE GEN PURP 600V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Qualification: MIL-PRF-19500/411.
Weitere Produktangebote JANS1N5420
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JANS1N5420 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Qualification: MIL-PRF-19500/411 |
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