JAN2N6788U Microsemi Corporation
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Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
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Technische Details JAN2N6788U Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC, Packaging: Bulk, Package / Case: 18-CLCC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 18-ULCC (9.14x7.49), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V.