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IXTY18P10T

IXTY18P10T IXYS

IXT_18P10T.pdf Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4 EUR
20+ 3.6 EUR
25+ 2.95 EUR
26+ 2.79 EUR
Mindestbestellmenge: 18
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Produktbewertung abgeben

Technische Details IXTY18P10T IXYS

Description: MOSFET P-CH 100V 18A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.

Weitere Produktangebote IXTY18P10T nach Preis ab 2.79 EUR bis 6.35 EUR

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IXTY18P10T IXTY18P10T Hersteller : IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4 EUR
20+ 3.6 EUR
25+ 2.95 EUR
26+ 2.79 EUR
Mindestbestellmenge: 18
IXTY18P10T IXTY18P10T Hersteller : IXYS media-3320772.pdf MOSFETs -100V -18A
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.34 EUR
10+ 5.32 EUR
25+ 5.03 EUR
70+ 4.24 EUR
280+ 4 EUR
560+ 3.75 EUR
1050+ 3.31 EUR
IXTY18P10T IXTY18P10T Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 18A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.35 EUR
70+ 5.03 EUR
140+ 4.31 EUR
560+ 3.83 EUR
1050+ 3.28 EUR
2030+ 3.09 EUR
Mindestbestellmenge: 3
IXTY18P10T IXTY18P10T Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf Trans MOSFET P-CH 100V 18A 3-Pin(2+Tab) DPAK
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