IXTY01N100 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
auf Bestellung 19125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.04 EUR |
| 70+ | 2.46 EUR |
| 140+ | 2.02 EUR |
| 560+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTY01N100 Littelfuse Inc.
Description: MOSFET N-CH 1000V 100MA TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V.
Weitere Produktangebote IXTY01N100 nach Preis ab 2.11 EUR bis 3.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTY01N100 | Hersteller : IXYS |
MOSFETs 0.1 Amps 1000V 80 Rds |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXTY01N100 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXTY01N100 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: SMD Case: TO252 |
Produkt ist nicht verfügbar |