IXTT3N200P3HV Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 2000V 3A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 80.92 EUR |
| 30+ | 67.8 EUR |
| 120+ | 63.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTT3N200P3HV Littelfuse Inc.
Description: MOSFET N-CH 2000V 3A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V.
Weitere Produktangebote IXTT3N200P3HV nach Preis ab 60.84 EUR bis 81.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTT3N200P3HV | Hersteller : IXYS |
MOSFET MSFT N-CH STD-POLAR3 |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IXTT3N200P3HV | Hersteller : Littelfuse |
Power Mosfet |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IXTT3N200P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO268HV On-state resistance: 8Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IXTT3N200P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO268HV On-state resistance: 8Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |