auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.01 EUR |
| 50+ | 7.13 EUR |
| 100+ | 6.11 EUR |
| 500+ | 5.46 EUR |
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Technische Details IXTA1R6N100D2HV IXYS
Description: MOSFET N-CH 1000V 1.6A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V.
Weitere Produktangebote IXTA1R6N100D2HV nach Preis ab 6.13 EUR bis 9.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA1R6N100D2HV | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 1.6A TO263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V |
auf Bestellung 118 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1R6N100D2HV | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTA1R6N100D2HV - Leistungs-MOSFET, n-Kanal, 1 kV, 1.6 A, 10 ohm, TO-263HV, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 1.6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 100W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: - Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 10ohm SVHC: To Be Advised |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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| IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns |
Produkt ist nicht verfügbar |