auf Bestellung 720 Stücke:
Lieferzeit 234-238 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.27 EUR |
| 10+ | 28.25 EUR |
| 30+ | 23.62 EUR |
| 60+ | 22.86 EUR |
| 120+ | 21.52 EUR |
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Technische Details IXFH90N65X3 IXYS
Description: MOSFET 90A 650V X3 TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 4mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V.
Weitere Produktangebote IXFH90N65X3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IXFH90N65X3 | Hersteller : Littelfuse |
 Discrete MOSFET |
Produkt ist nicht verfügbar |
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| IXFH90N65X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 150A Power dissipation: 960W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH90N65X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET 90A 650V X3 TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 4mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IXFH90N65X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 150A Power dissipation: 960W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns |
Produkt ist nicht verfügbar |