ISO5851DW Texas Instruments
Hersteller: Texas InstrumentsGalvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features 16-SOIC -40 to 125
auf Bestellung 4693 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.74 EUR |
| 10+ | 9.7 EUR |
| 25+ | 8.04 EUR |
| 120+ | 7.09 EUR |
| 280+ | 6.72 EUR |
| 520+ | 6.41 EUR |
| 1000+ | 5.81 EUR |
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Technische Details ISO5851DW Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Protection: undervoltage UVP, Operating temperature: -40...125°C, Insulation voltage: 5.7kV, Input voltage: 3...5.5V, Integrated circuit features: galvanically isolated, Kind of package: tube, Mounting: SMD, Kind of integrated circuit: gate driver; high-/low-side, Case: SO16-W, Topology: IGBT half-bridge; MOSFET half-bridge, Supply voltage: 15...30V DC, Output current: -5...2.5A, Type of integrated circuit: driver, Impulse rise time: 35ns, Pulse fall time: 37ns, Number of channels: 2, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISO5851DW nach Preis ab 5.91 EUR bis 10.81 EUR
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ISO5851DW | Hersteller : Texas Instruments |
Description: DGTL ISO 5.7KV 1CH GT DVR 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.7A, 5.5A Technology: Capacitive Coupling Current - Output High, Low: 1.5A, 3.4A Voltage - Isolation: 5700Vrms Approval Agency: CQC, CSA, UR, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 20ns, 20ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 110ns, 110ns Number of Channels: 1 Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 3037 Stücke: Lieferzeit 10-14 Tag (e) |
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ISO5851DW | Hersteller : Texas Instruments |
Driver 5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube |
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ISO5851DW | Hersteller : Texas Instruments |
Driver 5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube |
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ISO5851DW | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Protection: undervoltage UVP Operating temperature: -40...125°C Insulation voltage: 5.7kV Input voltage: 3...5.5V Integrated circuit features: galvanically isolated Kind of package: tube Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Output current: -5...2.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 37ns Number of channels: 2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ISO5851DW | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Protection: undervoltage UVP Operating temperature: -40...125°C Insulation voltage: 5.7kV Input voltage: 3...5.5V Integrated circuit features: galvanically isolated Kind of package: tube Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Output current: -5...2.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 37ns Number of channels: 2 |
Produkt ist nicht verfügbar |