IRLR3110ZTRRPBF ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IRLR3110ZTRRPBF - IRLR3110ZTRRPBF - TRENCH 100V
tariffCode: 85423990
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IRLR3110ZTRRPBF - IRLR3110ZTRRPBF - TRENCH 100V
tariffCode: 85423990
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRLR3110ZTRRPBF ROCHESTER ELECTRONICS
Description: MOSFET N-CH 100V 42A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V.
Weitere Produktangebote IRLR3110ZTRRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRLR3110ZTRRPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR3110ZTRRPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR3110ZTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR3110ZTRRPBF | Hersteller : Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC |
Produkt ist nicht verfügbar |