IRG7PH46UD-EP Infineon Technologies
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 108A 390000mW 3-Pin(3+Tab) TO-247AD Tube
Trans IGBT Chip N-CH 1200V 108A 390000mW 3-Pin(3+Tab) TO-247AD Tube
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Technische Details IRG7PH46UD-EP Infineon Technologies
Description: IGBT 1200V 108A COPAK247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247AD, IGBT Type: Trench, Td (on/off) @ 25°C: 45ns/410ns, Switching Energy: 2.61mJ (on), 1.85mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 220 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 390 W.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRG7PH46UD-EP | Hersteller : Infineon Technologies |
Description: IGBT 1200V 108A COPAK247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 45ns/410ns Switching Energy: 2.61mJ (on), 1.85mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 220 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 390 W |
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IRG7PH46UD-EP | Hersteller : Infineon Technologies | IGBT Transistors INDUSTRY 59 |
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IRG7PH46UD-EP | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 57A Power dissipation: 390W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 0.32µC Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
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