IRG4PH30KD

IRG4PH30KD Infineon Technologies


Infineon-IRG4PH30KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535648131a230d Hersteller: Infineon Technologies
Description: IGBT 1200V 20A 100W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 39ns/220ns
Switching Energy: 950µJ (on), 1.15mJ (off)
Test Condition: 800V, 10A, 23Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
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Technische Details IRG4PH30KD Infineon Technologies

Description: IGBT 1200V 20A 100W TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 39ns/220ns, Switching Energy: 950µJ (on), 1.15mJ (off), Test Condition: 800V, 10A, 23Ohm, 15V, Gate Charge: 53 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 100 W.