IRFD323 Harris Corporation
Hersteller: Harris CorporationDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 198+ | 2.5 EUR |
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Technische Details IRFD323 Harris Corporation
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V.