IRF6797MTRPBF ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IRF6797MTRPBF - IRF6797 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 16950 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF6797MTRPBF ROCHESTER ELECTRONICS
Description: MOSFET N-CH 25V 36A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V.
Weitere Produktangebote IRF6797MTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRF6797MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 25V 36A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
|
 |
IRF6797MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET Kind of package: reel Drain-source voltage: 25V Drain current: 210A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
|
 |
IRF6797MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 36A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V |
Produkt ist nicht verfügbar |
|
 |
IRF6797MTRPBF | Hersteller : Infineon Technologies |
MOSFET 25V SINGLE N-CH 20V VGS MAX |
Produkt ist nicht verfügbar |
|
|
|
IRF6797MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET Kind of package: reel Drain-source voltage: 25V Drain current: 210A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
Produkt ist nicht verfügbar |