IRF3709ZSTRRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.22 EUR |
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Technische Details IRF3709ZSTRRPBF Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: D2PAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V.
Weitere Produktangebote IRF3709ZSTRRPBF nach Preis ab 1.09 EUR bis 3.68 EUR
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IRF3709ZSTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R |
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IRF3709ZSTRRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 30V 87A 6.3mOhm 17nC Qg |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3709ZSTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 87A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V |
auf Bestellung 824 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3709ZSTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF3709ZSTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |