Produkte > INFINEON TECHNOLOGIES > IPU60R3K4CEAKMA1
IPU60R3K4CEAKMA1

IPU60R3K4CEAKMA1 Infineon Technologies

Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2308+0.21 EUR
Mindestbestellmenge: 2308
Produktrezensionen
Produktbewertung abgeben

Technische Details IPU60R3K4CEAKMA1 Infineon Technologies

Description: CONSUMER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V.

Weitere Produktangebote IPU60R3K4CEAKMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPU60R3K4CEAKMA1 IPU60R3K4CEAKMA1 Hersteller : Infineon Technologies Infineon-IPA80R1K0CE-DS-v02_01-EN-1227032.pdf MOSFET
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
IPU60R3K4CEAKMA1 Hersteller : ROCHESTER ELECTRONICS INFN-S-A0002363161-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IPU60R3K4CEAKMA1 - IPU60R3K4 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
IPU60R3K4CEAKMA1 IPU60R3K4CEAKMA1 Hersteller : Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Produkt ist nicht verfügbar