Produkte > INFINEON TECHNOLOGIES > IPS65R650CEAKMA1
IPS65R650CEAKMA1

IPS65R650CEAKMA1 Infineon Technologies

Infineon-IPS65R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539da993114571 Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
657+0.81 EUR
Mindestbestellmenge: 657
Produktrezensionen
Produktbewertung abgeben

Technische Details IPS65R650CEAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 10.1A TO251-3, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO251-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.

Weitere Produktangebote IPS65R650CEAKMA1 nach Preis ab 1.27 EUR bis 2.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPS65R650CEAKMA1 Hersteller : Infineon Technologies Infineon-IPS65R650CE-DS-v02_00-EN-1731976.pdf MOSFET CONSUMER
auf Bestellung 1488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.2 EUR
10+ 1.99 EUR
100+ 1.54 EUR
500+ 1.27 EUR
Mindestbestellmenge: 2
IPS65R650CEAKMA1 IPS65R650CEAKMA1 Hersteller : Infineon Technologies Infineon-IPS65R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539da993114571 Description: MOSFET N-CH 700V 10.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar