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IPS60R800CEAKMA1

IPS60R800CEAKMA1 Infineon Technologies

Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
899+0.52 EUR
Mindestbestellmenge: 899
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Technische Details IPS60R800CEAKMA1 Infineon Technologies

Description: CONSUMER, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj), Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V.

Weitere Produktangebote IPS60R800CEAKMA1 nach Preis ab 0.51 EUR bis 1.41 EUR

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IPS60R800CEAKMA1 IPS60R800CEAKMA1 Hersteller : Infineon Technologies Infineon_IPS60R800CE_DS_v02_00_EN-1731877.pdf MOSFETs CONSUMER
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.41 EUR
10+ 1.26 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
1500+ 0.55 EUR
4500+ 0.51 EUR
Mindestbestellmenge: 2
IPS60R800CEAKMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: ROCHESTER ELECTRONICS - IPS60R800CEAKMA1 - CONSUMER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
IPS60R800CEAKMA1 IPS60R800CEAKMA1 Hersteller : Infineon Technologies Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
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