auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
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Technische Details IPS60R2K1CEAKMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.
Weitere Produktangebote IPS60R2K1CEAKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPS60R2K1CEAKMA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPS60R2K1CEAKMA1 - IPS60R2K1 COOLMOS N-CHANNEL POWER MOSFETtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 60140 Stücke: Lieferzeit 14-21 Tag (e) |
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IPS60R2K1CEAKMA1 | Hersteller : Infineon Technologies |
Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
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