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IPP70N12S3L12AKSA1

IPP70N12S3L12AKSA1 Infineon Technologies

IPx70N12S3L-12.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 39177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
348+1.42 EUR
Mindestbestellmenge: 348
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Technische Details IPP70N12S3L12AKSA1 Infineon Technologies

Description: MOSFET N-CHANNEL_100+, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 83µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V.

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IPP70N12S3L12AKSA1 Hersteller : Infineon Technologies IPx70N12S3L-12.pdf MOSFET N-CHANNEL 100+
auf Bestellung 500 Stücke:
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IPP70N12S3L12AKSA1 IPP70N12S3L12AKSA1 Hersteller : Infineon Technologies 13infineon-ipp_b_i70n12s3l-12-data-sheet-02-infineon-ds-v01_00-en.p.pdf OptiMOS -T Power-Transistor
Produkt ist nicht verfügbar
IPP70N12S3L12AKSA1 IPP70N12S3L12AKSA1 Hersteller : Infineon Technologies IPx70N12S3L-12.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Produkt ist nicht verfügbar