IPD80R3K3P7ATMA1 Infineon Technologies
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 354+ | 0.43 EUR |
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Technische Details IPD80R3K3P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.
Weitere Produktangebote IPD80R3K3P7ATMA1 nach Preis ab 0.34 EUR bis 2.01 EUR
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2370 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2510 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
MOSFET 800V CoolMOS P7PowerDevice |
auf Bestellung 2508 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD80R3K3P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD80R3K3P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |