IPB80N06S4L05ATMA2 Infineon Technologies
auf Bestellung 7000 Stücke:
Lieferzeit 374-378 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 3.68 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB80N06S4L05ATMA2 Infineon Technologies
Description: MOSFET_)40V,60V), Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 60µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V.
Weitere Produktangebote IPB80N06S4L05ATMA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IPB80N06S4L05ATMA2 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
| IPB80N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V,60V) Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V |
Produkt ist nicht verfügbar |