HS54095TZ-E Renesas
Hersteller: RenesasDescription: HS54095TZ-E - N-CHANNEL POWER MO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 66 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 382+ | 1.27 EUR |
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Technische Details HS54095TZ-E Renesas
Description: HS54095TZ-E - N-CHANNEL POWER MO, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-92, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 66 pF @ 25 V.