GT105N10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.06 EUR |
11+ | 1.68 EUR |
100+ | 1.31 EUR |
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Technische Details GT105N10T Goford Semiconductor
N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252.
Weitere Produktangebote GT105N10T nach Preis ab 0.55 EUR bis 0.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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GT105N10T | Hersteller : GOFORD Semiconductor | N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252 |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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