GT016N10Q Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 100V 228A TO-247
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 50 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.94 EUR |
| 10+ | 6.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT016N10Q Goford Semiconductor
Description: MOSFET N-CH 100V 228A TO-247, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 228A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 50 V.