GSFT60R099 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, N-CH, SINGLE, 36.00A, 60
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tj)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 261W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3231 pF @ 50 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.18 EUR |
| 10+ | 6.03 EUR |
| 100+ | 4.88 EUR |
| 500+ | 4.33 EUR |
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Technische Details GSFT60R099 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 36.00A, 60, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tj), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Power Dissipation (Max): 261W (Tj), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 57.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3231 pF @ 50 V.