GSFD6016 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, N-CH, SINGLE, 60.00A, 60
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 0.69 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.23 EUR |
| 5000+ | 0.22 EUR |
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Technische Details GSFD6016 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60.00A, 60, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V.