GS66516B-TR Infineon Technologies
auf Bestellung 1529 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 87.63 EUR |
| 10+ | 78.07 EUR |
| 25+ | 73.43 EUR |
| 50+ | 70.98 EUR |
| 100+ | 68.53 EUR |
| 250+ | 66.07 EUR |
| 500+ | 61.93 EUR |
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Technische Details GS66516B-TR Infineon Technologies
Description: GS66516B-TR, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 14mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V.
Weitere Produktangebote GS66516B-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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GS66516B-TR | Hersteller : GaN Systems |
 Bottom-side cooled 650 V E-mode GaN transistor |
Produkt ist nicht verfügbar |
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GS66516B-TR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66516B-TR Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V Vgs(th) (Max) @ Id: 1.3V @ 14mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V |
Produkt ist nicht verfügbar |