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G18NP06Y

G18NP06Y Goford Semiconductor

GOFORD-G18NP06Y.pdf Hersteller: Goford Semiconductor
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
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Technische Details G18NP06Y Goford Semiconductor

Description: MOSFET N+P-CH 60V 18A/-18A 45W/5, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 45W (Tc), 50W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V, Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA, Supplier Device Package: TO-252-4.

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G18NP06Y G18NP06Y Hersteller : Goford Semiconductor GOFORD-G18NP06Y.pdf Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
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