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FS35R12KT3BOSA1

FS35R12KT3BOSA1 Infineon Technologies


Infineon-FS35R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431421f53f3 Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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Technische Details FS35R12KT3BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 55A 210W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.