FF3MR12KM1HPHPSA1 Infineon Technologies

Description: FF3MR12KM1HPHPSA1, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 220A, Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V, Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V, Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V, Vgs(th) (Max) @ Id: 5.1V @ 112mA, Supplier Device Package: AG-62MMHB.