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FDZ493P Fairchild Semiconductor
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Description: MOSFET P-CH 20V 4.6A 9BGA
Packaging: Bulk
Package / Case: 9-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-BGA (1.55x1.55)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 10 V
auf Bestellung 47700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1025+ | 0.47 EUR |
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Technische Details FDZ493P Fairchild Semiconductor
Description: MOSFET P-CH 20V 4.6A 9BGA, Packaging: Bulk, Package / Case: 9-WFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 9-BGA (1.55x1.55), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 10 V.