FDZ201N
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details FDZ201N
Description: MOSFET N-CH 20V 9A 12BGA, Packaging: Tape & Reel (TR), Package / Case: 12-WFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 12-BGA (2x2.5), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1127 pF @ 10 V.
Weitere Produktangebote FDZ201N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDZ201N | Hersteller : onsemi |
Description: MOSFET N-CH 20V 9A 12BGA Packaging: Tape & Reel (TR) Package / Case: 12-WFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 12-BGA (2x2.5) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1127 pF @ 10 V |
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