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FDS6986AS_SN00192

FDS6986AS_SN00192 onsemi


Hersteller: onsemi
Description: MOSFET 2 N-CH 30V 6.5A/7.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, 550pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
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Technische Details FDS6986AS_SN00192 onsemi

Description: MOSFET 2 N-CH 30V 6.5A/7.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, 550pF @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-SO, Part Status: Obsolete.