Technische Details FDS6673AZ FAI
Description: MOSFET P-CH 30V 14.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 14.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 15 V.
Weitere Produktangebote FDS6673AZ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDS6673AZ | Hersteller : FAIRCHILD |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6673AZ | Hersteller : FAIRCHILD | 07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6673AZ | Hersteller : FAIRCHILD | SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6673AZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 14.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS6673AZ | Hersteller : onsemi / Fairchild | MOSFET 30V SO8 PCH POWER TRENCH MOSFET |
Produkt ist nicht verfügbar |