FDS3601 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET 2N-CH 100V 1.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 100V 1.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 49698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
740+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS3601 Fairchild Semiconductor
Description: MOSFET 2N-CH 100V 1.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V, Rds On (Max) @ Id, Vgs: 480mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FDS3601
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDS3601 | Hersteller : ONSEMI |
Description: ONSEMI - FDS3601 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 49698 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3601 | Hersteller : FAIRCHILD | 07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS3601 | Hersteller : FAIRCHILD | SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS3601 | Hersteller : FSC | 0430+ SOP-8 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS3601 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 1.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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FDS3601 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 1.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Rds On (Max) @ Id, Vgs: 480mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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FDS3601 | Hersteller : onsemi / Fairchild | MOSFET SO-8 |
Produkt ist nicht verfügbar |