DZ600N14KHQSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 1.4KV 735A PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 735A
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Description: DIODE GP 1.4KV 735A PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 735A
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DZ600N14KHQSA2 Infineon Technologies
Description: DIODE GP 1.4KV 735A PB501-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 735A, Supplier Device Package: BG-PB501-1, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A, Current - Reverse Leakage @ Vr: 40 mA @ 1400 V.