Produkte > ONSEMI > DTD113E

DTD113E onsemi

Name: DTD113E
Brand: onsemi
SKU: 12563913-3
Price: 0.049 EUR
Availability: InStock

ONSMS30292-1.pdf?t.download=true&u=5oefqw

Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms

auf Bestellung 25000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
11539+	0.049 EUR

Mindestbestellmenge: 11539

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Technische Details DTD113E onsemi

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 350 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.