DMP31D1UVT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP31D1UVT-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 760mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V, Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: TSOT-26.