DMP3056LVT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 4.3A TSOT-26
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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Technische Details DMP3056LVT-7 Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A TSOT-26, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V, Power Dissipation (Max): 1.38W, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V.