DMN38M1SCA10-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V X4-DSN3415
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1914pF @ 15V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.7nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X4-DSN3415-10
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Technische Details DMN38M1SCA10-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X4-DSN3415, Packaging: Tape & Reel (TR), Package / Case: 10-XFLGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1914pF @ 15V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36.7nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: X4-DSN3415-10.