Produkte > DIODES INCORPORATED > DMN33D8LDWQ-13
DMN33D8LDWQ-13

DMN33D8LDWQ-13 Diodes Incorporated


DMN33D8LDWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DMN33D8LDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.