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DMN2310UTQ-7

DMN2310UTQ-7 Diodes Incorporated

DMN2310UTQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
9000+ 0.093 EUR
30000+ 0.092 EUR
75000+ 0.076 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2310UTQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V, Power Dissipation (Max): 290mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-523, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN2310UTQ-7 nach Preis ab 0.092 EUR bis 0.64 EUR

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Preis ohne MwSt
DMN2310UTQ-7 DMN2310UTQ-7 Hersteller : Diodes Incorporated DMN2310UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 110194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
41+ 0.44 EUR
100+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 28
DMN2310UTQ-7 Hersteller : Diodes Incorporated DIOD_S_A0012188337_1-2543695.pdf MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.44 EUR
100+ 0.18 EUR
1000+ 0.14 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
24000+ 0.092 EUR
Mindestbestellmenge: 5
DMN2310UTQ-7 Hersteller : Diodes Inc dmn2310utq.pdf N-Channel Enhancement Mode MOSFET
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